SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A method of manufacturing a semiconductor device includes processes of forming a gate electrode, a source electrode, and a drain electrode on a nitride semiconductor layer, forming an insulating film including, on a surface thereof, a step that covers the gate electrode and reflects a shape of the gate electrode, and a flat portion, forming a mask on the insulating film, forming an opening in the mask, the opening including a shape in which a side surface of the step is located on an inner side of the opening and an upper surface end portion of the gate electrode is located on an outer side of the opening, and having an overhang shape extending in a depth direction, and forming a field plate extending from a side surface of the step to the flat portion using the mask.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a gate electrode, a source electrode, and a drain electrode on a semiconductor layer, the gate electrode having an edge in a side of the drain electrode and another edge in a side of the source electrode; forming an insulating film that includes a step and a flat portion on a surface thereof, the step covering the gate electrode and tracing a shape of the gate electrode, the flat portion locating between the step and the drain electrode; forming a photoresist on the insulating film; forming a mask on the insulating film, the mask having an window and an opening to form an overhang, the window having an inner side and an outer side, the inner side being aligned with the edge of the gate electrode in the side of the drain electrode, the outer side being positioned on the flat portion of the insulating film; and depositing a metal on the insulating film using the photoresist as a mask to form a field plate extending from a side surface of the step to the flat portion.