| 发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
The present invention shortens the time needed to decrease the oxygen concentration in a chamber to be filled with an inert gas to a desired concentration. A substrate processing apparatus includes: a processing chamber configured to process a substrate; and a carrying chamber configured to carry the substrate to the processing chamber. The carrying chamber includes: a plurality of wall bodies configured to form a housing of the carrying chamber; a joint at which the plurality of wall bodies are joined; an isolated space creating member configured to cover the joint and thereby create an isolated space separated from the carrying chamber; and an exhaust section configured to purge gas in the isolated space. |
| 申请公布号 |
US2015279712(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201314431678 |
申请日期 |
2013.09.04 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
Yachi Masamichi |
| 分类号 |
H01L21/673;H01L21/324 |
主分类号 |
H01L21/673 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus comprising:
a processing chamber configured to process a substrate; and a carrying chamber configured to carry the substrate to the processing chamber, the carrying chamber including:
a plurality of wall bodies configured to form a housing of the carrying chamber;a joint at which the plurality of wall bodies are joined; andan isolated space creating member configured to cover the joint and thereby provide an isolated space separated from the carrying chamber; and an exhaust section configured to purge gas in the isolated space. |
| 地址 |
Tokyo JP |
