发明名称 TREATING SOLUTION FOR ELECTRONIC PARTS, AND PROCESS FOR PRODUCING ELECTRONIC PARTS
摘要 The invention provides an aqueous solution capable of selectively protecting a nitrogen-containing silicon compound from corrosion by a treating solution for etching, cleaning or the like, etching oxygen-containing, carbon-containing silicon in particular, and making a large etch rate difference between a nitrogen-containing silicon compound and an oxygen-containing silicon compound, and a process for producing electronic parts as well.;The invention is embodied by a treating solution for electronic parts that is an aqueous solution containing one or two or more of anionic surface active agents represented by the following formulae (1), (2) and (3), and a process for producing an electronic part.;wherein R1, R2, and R3 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X1 stands for a functional group capable of becoming an anionic ion.;wherein R4 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, X2 stands for a functional group capable of becoming an anionic ion, and n stands for a natural number of greater than 2.;wherein R5 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X3, and X4 stands for a functional group capable of becoming an anionic ion.
申请公布号 US2015279654(A1) 申请公布日期 2015.10.01
申请号 US201514670785 申请日期 2015.03.27
申请人 FINE POLYMERS CORPORATION 发明人 KATO Toshitada;SATO Naoya;KAMON Shigeru;OGATA Koichiro
分类号 H01L21/02;C11D11/00;C11D1/02;C11D3/04;H01L21/311;C09K13/08 主分类号 H01L21/02
代理机构 代理人
主权项 1. A treating solution for electronic parts, which is an aqueous solution containing one or two or more of anionic surface active agents having the following formulae (1), (2) and (3): wherein R1, R2, and R3 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X1 stands for a functional group capable of becoming an anionic ion; wherein, R4 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, X2 stands for a functional group capable of becoming an anionic ion, and n stands for a natural number of 2 or greater; and wherein R5 stands for hydrogen or an alkyl or alkylene group having 1 to 4 carbon atoms, and X3, and X4 stands for a functional group capable of becoming an anionic ion.
地址 Tokyo JP