| 摘要 |
A gas-barrier film which comprises a base film and an inorganic layer, wherein the inorganic layer comprises Si, N, H, and O and includes, in the film-thickness-direction central part, an even region which is even in Si/N/H/O ratio and is low in the proportion of O, the even region having a thickness larger than 5 nm. In the inorganic layer, at least one of the regions that are in contact with the boundaries is an oxygen-containing region in which the O proportion, indicated by the equation (O proportion)=(number of O atoms)/(total number of Si, N, and O atoms)×100%, increases from the even-region side toward the boundary and in which the change of the O proportion per unit film thickness is 2-8 %/nm. This process for producing the gas-barrier film includes: forming an inorganic layer by a plasma-enhanced CVD method; and regulating the time period over which the electric power supplied for plasma formation is raised from 0 kW to a maximum value and the time period over which the high-frequency electric power is lowered from the maximum value to 0 kW. |
