LIGHT EMITTING DIODE ELEMENT

摘要

Provided is a light emitting diode element whereby high qualities can be obtained by suppressing luminous efficiency deterioration even if a lamination surface of a GaN substrate is a C plane. A light emitting diode element (10) is provided with: a GaN substrate (20) having a C plane as a lamination surface; an n-type GaN layer (30), which is laminated on the GaN substrate (20), and which is configured from a first n-type GaN layer (31), an n-type intermediate layer (32), and a second n-type GaN layer (33); and an AlGaN distortion adjustment layer (40) laminated on the n-type GaN layer (30). Furthermore, the light emitting diode element is provided with: a light emitting layer (50), which is laminated on the AlGaN distortion adjustment layer (40), and which has a multi-quantum well structure having well layers (51) and barrier layers (52), which are formed of InGaN having a lattice constant in the a-axis direction larger than that of the AlGaN distortion adjustment layer (40); and a p-type AlGaN cladding layer (60) that is laminated on the light emitting layer (50). The AlGaN distortion adjustment layer (40) is formed to have a layer thickness of 2-10 nm, and the light emitting layer (50) has the six well layers (51) laminated therein.