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经营范围
发明名称
具有高性能通道之半导体装置
摘要
申请公布号
TWI502741
申请公布日期
2015.10.01
申请号
TW101101484
申请日期
2012.01.13
申请人
克立公司
发明人
达尔 萨利;柳世衡;成林;阿加娃 安那
分类号
H01L29/78;H01L21/336
主分类号
H01L29/78
代理机构
代理人
陈长文 台北市松山区敦化北路201号7楼
主权项
一种半导体装置,其包括:一基板,其属于一第一导电类型;一第一井,其在该基板中,该第一井系属于一第二导电类型;一第二井,其在该基板中,该第二井系属于该第二导电类型;及一表面扩散通道,其属于该第二导电类型,该表面扩散通道形成在该第一井与该第二井之间的该基板中,其中该表面扩散通道之一深度及掺杂浓度系使得相比于不具有该表面扩散通道之该半导体装置而明显改良该半导体装置之一载子迁移率且该半导体装置展现出正常关断行为。
地址
美国
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