发明名称 METHOD OF MANUFACTURING CERAMIC SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a ceramic substrate which is capable of suppressing warp of the ceramic substrate and eliminating productivity decline even during manufacturing of a crystal device in a wafer level package.SOLUTION: A method of manufacturing a ceramic substrate includes firing a ceramic substrate in a molded state under temperature conditions that a fired ceramic substrate is recrystallized. The temperature conditions include: raising temperature preferably from normal temperature to 1450 degrees for approximately 15 hours; holding the temperature at 1450 degrees for approximately 2 hours; and lowering the temperature from 1450 degrees to normal temperature for 45 hours or more.
申请公布号 JP2015171982(A) 申请公布日期 2015.10.01
申请号 JP20140049380 申请日期 2014.03.12
申请人 CITIZEN FINEDEVICE CO LTD;CITIZEN HOLDINGS CO LTD 发明人 TSUCHIYA TAICHI
分类号 C04B35/622;C04B35/111;H01L23/12;H03H3/02;H05K1/03;H05K3/00 主分类号 C04B35/622
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