发明名称 |
METHOD OF MANUFACTURING CERAMIC SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ceramic substrate which is capable of suppressing warp of the ceramic substrate and eliminating productivity decline even during manufacturing of a crystal device in a wafer level package.SOLUTION: A method of manufacturing a ceramic substrate includes firing a ceramic substrate in a molded state under temperature conditions that a fired ceramic substrate is recrystallized. The temperature conditions include: raising temperature preferably from normal temperature to 1450 degrees for approximately 15 hours; holding the temperature at 1450 degrees for approximately 2 hours; and lowering the temperature from 1450 degrees to normal temperature for 45 hours or more. |
申请公布号 |
JP2015171982(A) |
申请公布日期 |
2015.10.01 |
申请号 |
JP20140049380 |
申请日期 |
2014.03.12 |
申请人 |
CITIZEN FINEDEVICE CO LTD;CITIZEN HOLDINGS CO LTD |
发明人 |
TSUCHIYA TAICHI |
分类号 |
C04B35/622;C04B35/111;H01L23/12;H03H3/02;H05K1/03;H05K3/00 |
主分类号 |
C04B35/622 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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