FIN-TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A fin-type field effect transistor includes a semiconductor body formed on a substrate, the semiconductor body having a top surface and a pair of laterally opposite sidewalls, and a gate electrode formed above the sidewalls and the top surface of the semiconductor body. The semiconductor body further includes a source region formed on an end portion of the semiconductor body, a drain region formed on another end portion of the semiconductor body, and a channel region formed between the source region and the drain region and surrounded by the gate electrode, wherein a doping concentration of the channel region decreases with increasing distance from the top surface and the sidewalls.

主权项

1. A fin-type field effect transistor comprising:
a semiconductor body formed on a substrate, the semiconductor body having a top surface and a pair of laterally opposite sidewalls; and a gate electrode formed above the sidewalls and the top surface of the semiconductor body, wherein the semiconductor body further comprises:
a source region formed on an end portion of the semiconductor body,a drain region formed on another end portion of the semiconductor body, and a channel region formed between the source region and the drain region and surrounded by the gate electrode,wherein a doping concentration of the channel region decreases with increasing distance from the top surface and the sidewalls.