COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT WITH THREE-DIMENSIONALLY FORMED COMPONENTS

摘要

A compound semiconductor integrated circuit with three-dimensionally formed components, such as three-dimensionally formed bond pads or inductors, positioned above an electronic device. The dielectric layer inserted between the electronic device and the bond pads or inductors thereon has a thickness between 10 to 30 microns, so that it can effectively mitigate the effect of the structure on the device performance. A SiN protection layer can be disposed to cover the electronic devices to prevent contamination from the bond pad or inductor material to the electronic device, and therefore the lower cost copper can be used as the bond pad and inductor material. The three-dimensional bond pad can be used in wire bonding or bump bonding technology.

主权项

1. A compound semiconductor integrated circuit, comprising:
an electronic device, said electronic device is configured as a high-frequency switch; a bond pad positioned on top of said electronic device in a three-dimensional manner at least partially overlapping said electronic device; a first dielectric layer inserted between said bond pad and said electronic device; a via hole formed in said first dielectric layer for electrical connection; and a metal layer formed below said via hole; wherein a coupling capacitance between said electronic device and said bond pad is reduced to 17 fF, and thereby mitigates said coupling capacitance induced between said electronic device and said bond pad that degrades the off-state isolation when said electronic device is said high-frequency switch.