发明名称 |
METHOD FOR HIGH-VELOCITY AND ATMOSPHERIC-PRESSURE ATOMIC LAYER DEPOSITION WITH SUBSTRATE AND COATING HEAD SEPARATION DISTANCE IN THE MILLIMETER RANGE |
摘要 |
An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface. |
申请公布号 |
US2015275363(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201414584034 |
申请日期 |
2014.12.29 |
申请人 |
Ultratech, Inc. |
发明人 |
Sershen Michael J.;Sundaram Ganesh M.;Coutu Roger R.;Becker Jill Svenja;Dalberth Mark J. |
分类号 |
C23C16/455;C23C16/453;C23C16/458 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
1. A deposition system comprising:
a substrate including a coating surface; a deposition head including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly, wherein the first precursor nozzle assembly is constructed and arranged to emit a first precursor into atmospheric conditions in a direction substantially normal to the coating surface and the second precursor nozzle assembly is constructed and arranged to emit a second precursor into atmospheric conditions in a direction substantially normal to the coating surface; and an actuator associated with the deposition head and/or the substrate, the actuator configured to generate relative motion between the deposition head and the substrate for exposing a first area of the coating surface to the first precursor followed by exposing the first area of the coating surface to the second precursor. |
地址 |
San Jose CA US |