| 发明名称 |
COMPOSITION FOR FORMING SILICA-BASED INSULATING LAYER, METHOD FOR PREPARING COMPOSITION FOR FORMING SILICA-BASED INSULATING LAYER, SILICA-BASED INSULATING LAYER, AND METHOD FOR MANUFACTURING SILICA-BASED INSULATING LAYER |
| 摘要 |
Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced. |
| 申请公布号 |
US2015274980(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201314432401 |
申请日期 |
2013.08.16 |
| 申请人 |
CHEIL INDUSTRIES INC. |
发明人 |
Yun Hui-Chan;Kwak Taek-Soo;Kim Mi-Young;Lim Sang-Hak;Han Kwen-Woo;Kim Go-Un;Kim Bong-Hwan;Kim Sang-Kyun;Na Yoong-Hee;Park Eun-Su;Bae Jin-Hee;Song Hyun-Ji;Lee Han-Song;Hong Seung-Hee |
| 分类号 |
C09D1/00;H01L21/02;H01B3/02 |
主分类号 |
C09D1/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition for a silica-based insulation layer, the composition comprising:
a hydrogenated polysilazane or a hydrogenated polysiloxazane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 in the composition is less than or equal to 1200 ppm. |
| 地址 |
Gumi-si Gyeongsangbuk-do KR |
