| 摘要 |
The invention relates to an EUV light source for a lighting device of a microlithographic projection exposure apparatus, wherein the EUV light source has an electron source (110) for generating an electron beam, an accelerator unit (120) for accelerating this electron beam and an undulator arrangement (100) for generating EUV light by deflecting the electron beam, wherein this undulator arrangement (100) has a first undulator (101) for generating EUV light having a first polarization state and at least one second undulator (102) for generating EUV light having a second polarization state, wherein the second polarization state differs from the first polarization state, wherein the second undulator (102) is arranged after the first undulator (101) along the propagation direction of the electron beam, and wherein the undulator arrangement (100) is configured in such a way that said undulator arrangement has a first operating mode, in which the first undulator (101) is at saturation in respect of the generation of EUV light, and at least one second operating mode, in which the first undulator (101) is not at saturation in respect of the generation of EUV light. |
