PHASE DEFECT EVALUATION METHOD FOR EUV MASK, METHOD FOR MANUFACTURING EUV MASK, EUV MASK BLANK, AND EUV MASK

摘要

Provided is an extreme ultraviolet (EUV) mask wherein the optimal correction amount for an absorption layer pattern surrounding a phase defect can be estimated with high precision, with the propagation state of the phase defect in a multi-layer reflective film being taken into account. The method for evaluating phase defects in an EUV mask in which a multi-layer reflective film has been formed on a substrate comprises: a step in which a reference mark for defect inspection is formed on a substrate; a step in which defect inspection is performed on the substrate and at least the position coordinates of a substrate defect that is a defect on the substrate are measured; a step in which a multi-layer reflective film is formed on the substrate; a step in which defect inspection is performed on the multi-layer reflective film and at least the position coordinates of a reflective film defect that is a defect on the multi-layer reflective film are measured; a step in which a defect model library that has been prepared is consulted regarding a defect model for the interior of the multi-layer reflective film; and a step in which a propagation state estimation model for phase defects in the interior of the multi-layer reflective film is prepared on the basis of the position coordinates of the substrate defect, the position coordinates of the reflective film defect, and the defect model for the interior of the multi-layer reflective film.