| 摘要 |
The present invention provides a thin film transistor which includes a substrate, a first gate electrode which is located on the substrate, a gate insulation layer which is located on the gate electrode, a semiconductor which is located on the gate dielectric layer, an etch stopper which is located on a channel of the substrate, a source electrode and a drain electrode which are located on the semiconductor and face each other around the first gate electrode, and a second gate electrode which is located on the channel of the semiconductor as the same layer as the source electrode and the drain electrode. The second gate is electrically separated from the source electrode and the drain electrode. According to the present invention, a threshold voltage (Vth) is uniformized by preventing the inflow of hydrogen (H) to the channel through a double gate structure. A thin film transistor display plate is manufactured through a simple manufacturing process. |
