| 发明名称 |
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A resistive random access memory and a method for fabricating the same are provided. The method includes providing a structure comprising a substrate, a bottom electrode disposed on the substrate, a metal oxide layer disposed on the bottom electrode, and an oxygen atom gettering layer disposed on the metal oxide layer; and subjecting the structure to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer. |
| 申请公布号 |
US2015280122(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201514735063 |
申请日期 |
2015.06.09 |
| 申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LEE Heng-Yuan;CHEN Pang-Shiu;WU Tai-Yuan;WANG Ching-Chiun |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a resistive random access memory, comprising:
providing a structure comprising a substrate, a bottom electrode disposed on the substrate, a metal oxide layer disposed on the bottom electrode, and an oxygen atom gettering layer disposed on the metal oxide layer; and subjecting the structure to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer. |
| 地址 |
Hsinchu TW |
