| 发明名称 |
MAGNETIC MULTILAYER FILM AND TUNNELING MAGNETORESISTANCE ELEMENT |
| 摘要 |
A magnetic multilayer film, includes a nonmagnetic layer including a single- or poly-crystalline magnesium oxide in which a (001) crystal plane is preferentially oriented, a very thin layer including an oxide of a 3d transition metal element, and a very thin ferromagnetic layer, laminated in sequence starting on a substrate side. |
| 申请公布号 |
US2015280111(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201314423978 |
申请日期 |
2013.08.27 |
| 申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
Yuasa Shinji;Nozaki Takayuki |
| 分类号 |
H01L43/10;H01L43/08;H01L43/02 |
主分类号 |
H01L43/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic multilayer film comprising in sequence starting on a substrate side:
a nonmagnetic layer comprising a single- or poly-crystalline magnesium oxide in which a (001) crystal plane is preferentially oriented; an oxide layer with a thickness of 0.2 to 1.5 nm comprising an oxide of 3d transition metal element; and a ferromagnetic layer as a continuous film with a thickness of 0.3 to 0.8 nm. |
| 地址 |
Tokyo JP |
