TRENCH FORMING METHOD, METAL WIRING FORMING METHOD, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL

摘要

A method of forming a thin film transistor array panel includes: forming a first insulating layer on a substrate; forming an amorphous carbon layer on the first insulating layer; forming a second insulating layer on the amorphous carbon layer; forming an opening in the amorphous carbon layer by patterning the second insulating layer and the amorphous carbon layer; and forming a trench in the first insulating layer by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer including the opening as a mask.

主权项

1. A method of forming a thin film transistor array panel, the method comprising:
providing a first insulating layer on a substrate; providing an amorphous carbon layer on the first insulating layer; providing a second insulating layer on the amorphous carbon layer; patterning the second insulating layer and the amorphous carbon layer, to form an opening in the amorphous carbon layer; etching the first insulating layer by using the amorphous carbon layer comprising the opening as a mask, to form a trench in the first insulating layer; removing the amorphous carbon layer; providing a metal layer on the substrate; and polishing the metal layer through a chemical mechanical polishing process, to form a metal wiring in the trench.