TEMPERATURE COMPENSATION VIA MODULATION OF BIT LINE VOLTAGE DURING SENSING

摘要

Embodiments of systems and methods described herein relate to temperature compensation of the sense conditions of memory cells during cross temperatures read operations. One embodiment provides a memory device comprising one or more memory cells, a temperature sensor and a controller coupled to the temperature sensor. The temperature sensor measures a temperature of at least one memory cell. The controller modulates a bit line voltage of the at least one memory cell during a program verify or read operation if the read temperature of the at least one memory cell is different from a first temperature of the memory cell.

主权项

1. A memory device, comprising:
one or more memory cells; at least one temperature sensor to measure a temperature of at least one memory cell; and a controller coupled to the at least one temperature sensor to modulate a bit line voltage of the at least one memory cell during a program verify or a read operation if a read temperature of the at least one memory cell is different from a first temperature of the memory cell.