| 摘要 |
The purpose of the present invention is to provide a wiring formation method which makes it possible to minimize the side etching of a copper wiring pattern, and an etching solution to be used therein. This wiring formation method involves contacting an etching solution and one part of a copper layer (3) of a layered plate (100) obtained by layering the copper layer (3) on a substrate (1), and forming a copper wiring pattern (7) by etching the one part of the copper layer (3). The copper layer (3) has a thickness of 1.5μm or less. The etching solution is an acidic aqueous solution containing 0.1-3 wt% of a cupric ion, 0.1-30 wt% of a halide ion, and 0.05-20 wt% of polyalkylene glycol. This wiring formation method involves setting the temperature of the etching solution when etching the copper layer (3) to (T-10)°C or higher. T is the temperature at which the etching solution starts to become turbid. |
