发明名称 COMPOSITION FOR SILICON MATERIAL POLISHING
摘要 A composition for silicon material polishing according to the present invention has a pH of 8-12, and contains abrasive grains, water, a compound expressed by formula (A), and a compound expressed by formula (B) (R1-R4 are selected from the group comprising an alkyl group that has four or less carbon atoms, a hydroxyalkyl group that has four of less carbon atoms, and an aryl group that may be substituted; X- is an anion) (X1 represents a hydrogen atom, an amino group, or a bond to a C1 atom, and in the event of a bond to a C1 atom, an H1 atom is not present) (X2 represents a hydrogen atom, an amino group, an aminoalkyl group, or a bond to a C1 atom, and in the event of a bond to a C1 atom, a C1-N1 bond is a double bond, and an H2 atom is not present; 1 is 1-6, m is 1-4, and n is 0-4).
申请公布号 WO2015147011(A1) 申请公布日期 2015.10.01
申请号 WO2015JP58979 申请日期 2015.03.24
申请人 FUJIMI INCORPORATED 发明人 IMAO, TOMOHIRO;TAKAHASHI, SHUHEI;MORI, YOSHIO
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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