| 摘要 |
The present invention relates to a capacitive fingerprint sensing device comprising a semiconductor substrate; and an array of sensing elements formed on the semiconductor substrate. Each of the sensing elements comprises a protective dielectric top layer;a sensing structure arranged underneath the top layer; and a charge amplifier connected to the sensing structure. The charge amplifier comprises a negative input connected to the sensing structure;a positive input;an output providing a sensing signal;a feedback capacitor; and a sense transistor having a gate constituting the negative input. The sense transistor is formed in an insulated well in the semiconductor substrate. The fingerprint sensing device further comprises excitation signal providing circuitry connected to the positive input of the charge amplifier and the well for changing electric potentials of the sensing structure and the well, to thereby reduce the influence of parasitic capacitances in the sensing element. |
