COMPOSITION FOR FORMING PROTECTIVE LAYER, LAMINATE AND KIT

摘要

Provided are: a composition for forming a protective layer, which is not susceptible to the formation of a recessed and projected pattern in a silicon substrate-side surface (polished surface) of a device wafer after polishing of a silicon substrate of the device wafer, and which is capable of adequately forming an electrode at a high temperature by a CVD process; a laminate which has a protective layer that is obtained using this composition for forming a protective layer; and this composition for forming a protective layer. A composition for forming a protective layer for bonding a wafer and a supporting substrate with each other, which contains a resin having a melt flow rate of 4-150 g/10 min or less at 200˚C under a load of 10 kg in accordance with JIS K-7210. This composition for forming a protective layer has a Young's modulus of 0.02 GPa or less in accordance with JIS K-7127.