| 发明名称 |
STRUCTURE AND FORMATION METHOD OF MEMORY DEVICE |
| 摘要 |
Structures and formation methods of memory devices are provided. The memory device includes a first electrode, a second electrode, and a resistive layer positioned between the first electrode and the second electrode. The resistive layer has a crystalline portion. A volume ratio of the crystalline portion to the resistive layer is in a range from about 0.2 to about 1. |
| 申请公布号 |
US2015280119(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201414474931 |
申请日期 |
2014.09.02 |
| 申请人 |
Winbond Electronics Corp. |
发明人 |
HSU Po-Yen;LIAO Hsiu-Han;CHANG Shuo-Che;HO Chia Hua |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a first electrode; a second electrode; and a resistive layer positioned between the first electrode and the second electrode, wherein the resistive layer has a crystalline portion, and a volume ratio of the crystalline portion to the resistive layer is in a range from about 0.2 to about 1. |
| 地址 |
Taichung City TW |
