| 发明名称 |
METHOD FOR PRODUCING A PHOTOVOLTAIC CELL HAVING A HETEROJUNCTION, AND RESULTING PHOTOVOLTAIC CELL |
| 摘要 |
A method for producing a heterojunction solar cell including the following successive steps: providing a substrate made from crystalline semiconductor material, doped with a first type of doping, and provided with a first main face; depositing a first layer of intrinsic amorphous semiconductor material on said first main face of the substrate; and forming a second layer of amorphous semiconductor material on the first layer. The method includes deposition of a barrier layer between the first and second layers, said barrier layer being of different nature from those of the first and second layers and includes doping of the second layer by ion implantation. |
| 申请公布号 |
US2015280030(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201314429654 |
申请日期 |
2013.09.23 |
| 申请人 |
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
发明人 |
Ozanne Anne-Sophie;Munoz Maria-Delfina;Nguyen Nathalie |
| 分类号 |
H01L31/0376;H01L31/074;H01L31/20 |
主分类号 |
H01L31/0376 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a heterojunction solar cell comprising the following successive steps:
providing a substrate made from crystalline semiconductor material, doped with a first type of doping, and provided with a first main face, depositing a first layer of intrinsic amorphous semiconductor material on said first main face of the substrate, forming a second layer of amorphous semiconductor material on the first layer, said method comprising deposition of a barrier layer between the first and second layers, said barrier layer being of different nature from those of the first layer and second layer, and comprising doping of the second layer by ion implantation. |
| 地址 |
Paris FR |
