发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE |
摘要 |
A method for manufacturing a semiconductor optical device includes the steps of forming a semiconductor mesa by etching a stacked semiconductor layer, the semiconductor mesa being defined by two grooves, one on each side of the semiconductor mesa; forming a first insulating film on a side surface and a top surface of the semiconductor mesa; forming a resin film on the first insulating film, the resin film filling the grooves; etching the resin film on the semiconductor mesa to form a first opening in the resin film, the first insulating film being exposed through the first opening; etching the first insulating film exposed through the first opening to expose the top surface of the semiconductor mesa; depositing an ohmic metal on the top surface of the semiconductor mesa; and depositing a second insulating film on the ohmic metal and a surface of the resin film. |
申请公布号 |
US2015277046(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201414267175 |
申请日期 |
2014.05.01 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KOBAYASHI Hirohiko;YONEDA Yoshihiro;YAGI Hideki |
分类号 |
G02B6/132;G02F1/025;G02B6/136 |
主分类号 |
G02B6/132 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor optical device, comprising the steps of:
forming a stacked semiconductor layer on a substrate; forming a semiconductor mesa on the substrate by etching the stacked semiconductor layer, the semiconductor mesa being defined by two grooves in both sides of the semiconductor mesa; forming a first insulating film on a side surface and a top surface of the semiconductor mesa; forming a resin film on the first insulating film, the resin film filling the grooves in both sides of the semiconductor mesa; etching the resin film on the semiconductor mesa to form a first opening in the resin film, the first insulating film being exposed through the first opening; etching the first insulating film exposed through the first opening to expose the top surface of the semiconductor mesa; depositing an ohmic metal on the top surface of the semiconductor mesa; and depositing a second insulating film on the ohmic metal and a surface of the resin film. |
地址 |
Osaka JP |