发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE
摘要 A method for manufacturing a semiconductor optical device includes the steps of forming a semiconductor mesa by etching a stacked semiconductor layer, the semiconductor mesa being defined by two grooves, one on each side of the semiconductor mesa; forming a first insulating film on a side surface and a top surface of the semiconductor mesa; forming a resin film on the first insulating film, the resin film filling the grooves; etching the resin film on the semiconductor mesa to form a first opening in the resin film, the first insulating film being exposed through the first opening; etching the first insulating film exposed through the first opening to expose the top surface of the semiconductor mesa; depositing an ohmic metal on the top surface of the semiconductor mesa; and depositing a second insulating film on the ohmic metal and a surface of the resin film.
申请公布号 US2015277046(A1) 申请公布日期 2015.10.01
申请号 US201414267175 申请日期 2014.05.01
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 KOBAYASHI Hirohiko;YONEDA Yoshihiro;YAGI Hideki
分类号 G02B6/132;G02F1/025;G02B6/136 主分类号 G02B6/132
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor optical device, comprising the steps of: forming a stacked semiconductor layer on a substrate; forming a semiconductor mesa on the substrate by etching the stacked semiconductor layer, the semiconductor mesa being defined by two grooves in both sides of the semiconductor mesa; forming a first insulating film on a side surface and a top surface of the semiconductor mesa; forming a resin film on the first insulating film, the resin film filling the grooves in both sides of the semiconductor mesa; etching the resin film on the semiconductor mesa to form a first opening in the resin film, the first insulating film being exposed through the first opening; etching the first insulating film exposed through the first opening to expose the top surface of the semiconductor mesa; depositing an ohmic metal on the top surface of the semiconductor mesa; and depositing a second insulating film on the ohmic metal and a surface of the resin film.
地址 Osaka JP