发明名称 COMPOSITION FOR FORMING CERIUM-DOPED PZT PIEZOELECTRIC FILM
摘要 This composition for forming a cerium-doped PZT piezoelectric film contains the following: a PZT precursor containing the metal atoms that constitute a complex metal oxide; a diol; and polyvinylpyrrolidone or the like. Said composition contains a PZT precursor such that: the atomic proportions of the metals lead, cerium, zirconium, and titanium in the composition are 1.00 to 1.28, 0.005 to 0.05, 0.40 to 0.55, and 0.60 to 0.45, respectively; and the sum of the atomic proportion of zirconium and the atomic proportion of titanium is equal to 1. The oxide concentration of the PZT precursor as a proportion of the total mass of the composition is between 17% and 35%, inclusive; the diol constitutes between 16% and 56%, inclusive, of the total mass of the composition; and, in monomer-equivalent terms, there are 0.01 to 0.25 moles of the polyvinylpyrrolidone or the like per mole of the PZT precursor.
申请公布号 WO2015146863(A1) 申请公布日期 2015.10.01
申请号 WO2015JP58618 申请日期 2015.03.20
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 DOI TOSHIHIRO;SAKURAI HIDEAKI;SOYAMA NOBUYUKI
分类号 H01L41/187;C01G25/00;H01L41/318 主分类号 H01L41/187
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