| 摘要 |
The sintered oxide body comprises indium (In), gallium (Ga), zinc (Zn), oxygen (O), and unavoidable impurities, and is characterized in that: the sintered oxide body is provided with an IGZO (111) phase comprising In, Ga and Zn at In:Ga:Zn = 1:1:1 by atom ratio and an IGZO phase containing more Zn than the IGZO (111) phase; the IGZO phase containing more Zn than the IGZO (111) phase occupies a surface area ratio of 1 to 10%, and the atom number ratio of In, Ga and Zn in the sintered oxide body is In:Ga:Zn = 1:1:(1.02 to 1.10). The objective of the present invention is to provide an IGZO sintered oxide body allowing for a reduction of oxygen concentration that is necessary during sputtering to obtain a film having a desired carrier concentration. |
