| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element whose electrode is easy to form and which is capable of reducing a forward voltage, and a method of manufacturing a semiconductor light-emitting element.SOLUTION: The semiconductor light-emitting element includes an m-plane GaN substrate, a light-emitting structure formed on a front surface of the m-plane GaN substrate by using a GaN-based semiconductor, and a p-side contact electrode formed on an upper surface of the light-emitting structure and made of a metal (excluding magnesium). When a forward current applied to the m-plane GaN substrate, the light-emitting structure, and the p-side contact electrode is 20 mA, a forward voltage is 4.7 V or less. |
