发明名称 SELF-POWERED GATE DRIVE CIRCUIT APPARATUS AND METHOD
摘要 A self-powered gate drive circuit comprising a first capacitor electrically coupled to a power semiconductor collector node of the circuit; a first switch arranged between the first capacitor and a second capacitor, the first switch electrically coupling the first and second capacitors when switched on; the second capacitor; a first diode, the first diode anode electrically coupled to the first capacitor and the first diode cathode electrically coupled to the first switch; a second diode, the second diode cathode electrically coupled to the first capacitor and the second diode anode electrically coupled with a ground node of the circuit; and a second switch, wherein the second switch electrically couples the second capacitor with a power semiconductor gate node when switched on.
申请公布号 US2015280706(A1) 申请公布日期 2015.10.01
申请号 US201214438232 申请日期 2012.10.31
申请人 Sicard Thierry;Perruchoud Philippe 发明人 Sicard Thierry;Perruchoud Philippe
分类号 H03K17/567 主分类号 H03K17/567
代理机构 代理人
主权项 1. A self-powered gate drive circuit comprising: a first capacitor electrically coupled to a power semiconductor collector node of the circuit; a first switch arranged between the first capacitor and a second capacitor, the first switch electrically coupling the first and second capacitors when switched on; the second capacitor; a first diode, the first diode anode electrically coupled to the first capacitor and the first diode cathode electrically coupled to the first switch; a second diode, the second diode cathode electrically coupled to the first capacitor and the second diode anode electrically coupled with a ground node of the circuit; and a second switch, wherein the second switch electrically couples the second capacitor with a power semiconductor gate node when switched on.
地址 Auzeville Tolosane FR