发明名称 |
SELF-POWERED GATE DRIVE CIRCUIT APPARATUS AND METHOD |
摘要 |
A self-powered gate drive circuit comprising a first capacitor electrically coupled to a power semiconductor collector node of the circuit; a first switch arranged between the first capacitor and a second capacitor, the first switch electrically coupling the first and second capacitors when switched on; the second capacitor; a first diode, the first diode anode electrically coupled to the first capacitor and the first diode cathode electrically coupled to the first switch; a second diode, the second diode cathode electrically coupled to the first capacitor and the second diode anode electrically coupled with a ground node of the circuit; and a second switch, wherein the second switch electrically couples the second capacitor with a power semiconductor gate node when switched on. |
申请公布号 |
US2015280706(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201214438232 |
申请日期 |
2012.10.31 |
申请人 |
Sicard Thierry;Perruchoud Philippe |
发明人 |
Sicard Thierry;Perruchoud Philippe |
分类号 |
H03K17/567 |
主分类号 |
H03K17/567 |
代理机构 |
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代理人 |
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主权项 |
1. A self-powered gate drive circuit comprising:
a first capacitor electrically coupled to a power semiconductor collector node of the circuit; a first switch arranged between the first capacitor and a second capacitor, the first switch electrically coupling the first and second capacitors when switched on; the second capacitor; a first diode, the first diode anode electrically coupled to the first capacitor and the first diode cathode electrically coupled to the first switch; a second diode, the second diode cathode electrically coupled to the first capacitor and the second diode anode electrically coupled with a ground node of the circuit; and a second switch, wherein the second switch electrically couples the second capacitor with a power semiconductor gate node when switched on. |
地址 |
Auzeville Tolosane FR |