| 发明名称 |
DIRECTLY MODULATED LASER FOR PON APPLICATION |
| 摘要 |
In an embodiment, a laser includes a gain section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm. |
| 申请公布号 |
US2015280400(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201514737026 |
申请日期 |
2015.06.11 |
| 申请人 |
Finisar Corporation |
发明人 |
Matsui Yasuhiro |
| 分类号 |
H01S5/062;H01S5/0625;H04B10/50;H01S5/20;H01S5/343;H01S5/026;H01S5/12 |
主分类号 |
H01S5/062 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A laser comprising:
a gain section comprising:
an active region;an upper separate confinement heterostructure (SCH) above the active region having a thickness of at least 60 nanometers (nm); anda lower SCH below the active region having a thickness of at least 60 nm. |
| 地址 |
Sunnyvale CA US |
