SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

According to one embodiment, the second insulating film is provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer. The optical layer is provided on the first side and on the second insulating film at the outer periphery. The optical layer is transmissive with respect to light emitted from the light emitting layer. A plurality of protrusions and a plurality of recesses are provided at the first side. Peaks of the protrusions are positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.

主权项

1. A semiconductor light emitting device, comprising:
a semiconductor layer including a first side, a second side opposite to the first side, and a light emitting layer; a first electrode provided on the semiconductor layer on the second side; a second electrode provided on the semiconductor layer on the second side; a first insulating film provided on the second side; a first interconnect portion provided on the first insulating film and connected to the first electrode; a second interconnect portion provided on the first insulating film and connected to the second electrode; a second insulating film provided between the first interconnect portion and the second interconnect portion, and at an outer periphery of a side face of the semiconductor layer; and an optical layer provided on the first side and on the second insulating film at the outer periphery, the optical layer being transmissive with respect to light emitted from the light emitting layer, a plurality of protrusions and a plurality of recesses being provided at the first side, and peaks of the protrusions being positioned closer to the second side than an end on the second insulating film side of the optical layer at the outer periphery.