SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

主权项

1. A semiconductor device comprising:
a field insulating layer on a top surface of a substrate and including a trench defined therein that extends in a first direction; and a fin-type active pattern extending from the top surface of the substrate and through the trench defined in the field insulating layer, the fin-type active pattern including a first lower pattern that contacts the substrate and a first upper pattern that contacts the first lower pattern and protrudes further from the substrate than the field insulating layer, the first upper pattern comprising a lattice modifying material that is different from the first lower pattern, and the fin-type active pattern including a first fin portion and a second fin portion that is on both sides of the first fin portion in the first direction; and a first gate electrode intersecting the fin-type active pattern and extending in a second direction that is different from the first direction.