发明名称 BUILDING STACKED HOLLOW CHANNELS FOR A THREE DIMENSIONAL CIRCUIT DEVICE
摘要 A three dimensional stacked circuit device includes multiple decks of circuit elements, each deck including multiple tiers of circuit elements. Each deck includes a highly doped hollow channel extending through the deck. Below the first deck is a source conductor to drive activity of the circuit elements. Between each deck is a conductive stop layer that interconnects the hollow channel from one deck to the hollow channel of the deck adjacent to it. Thus, all hollow channels of all decks are electrically coupled to the source conductor.
申请公布号 WO2015149024(A1) 申请公布日期 2015.10.01
申请号 WO2015US23179 申请日期 2015.03.27
申请人 INTEL CORPORATION 发明人 LU, ZHENYU;LINDSAY, ROGER;KOVESHNIKOV, SERGEI
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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