| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern formation method which suppresses occurrence of roughness of the surface of exposed parts and missing contact holes after image development and is excellent in lithographic characteristics, e.g. resolution and circularity.SOLUTION: A pattern formation method includes (1) a step of forming a resist film on a substrate by using a radiation-sensitive composition comprising [A] a polymer containing structural units having an acid-dissociative group and structural units having a group represented by formula (1) in side chains and [B] a radiation-sensitive acid generator, (2) a step of exposing the resist film and (3) a step of developing the exposed resist film with a developer containing 80 mass% or more of an organic solvent. In the formula (1), Ais -N-SO-R, -COO, -Oor -SO. |
