| 发明名称 |
RAPID TRANSITION SCHMITT TRIGGER CIRCUIT |
| 摘要 |
A small-sized rapid transition Schmitt trigger circuit for use with a silicon-on-insulator process includes: a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit; wherein, the PMOS/NMOS body control circuit is configured to, through changing threshold voltages of the first NMOS transistor and the first PMOS transistor, enable different flip-flop threshold voltages for input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels. |
| 申请公布号 |
US2015280694(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201514739482 |
申请日期 |
2015.06.15 |
| 申请人 |
SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD. |
发明人 |
LI YANG |
| 分类号 |
H03K3/3565 |
主分类号 |
H03K3/3565 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A small-sized rapid transition Schmitt trigger circuit for use with a silicon-on-insulator process, comprising: a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit; wherein, the PMOS/NMOS body control circuit is configured to, through changing threshold voltages of the first NMOS transistor and the first PMOS transistor, enable different flip-flop threshold voltages for input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels. |
| 地址 |
Guangzhou CN |
