RESISTIVE RANDOM ACCESS MEMORY DEVICE

摘要

A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.

主权项

1. A resistive random access memory device comprising:
a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte on either side of the electrolyte, the second electrode being configured to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; wherein the solid electrolyte comprises a region made of an oxide of a first metal that forms a first metal oxide, wherein said region is doped by a second metal, distinct from the first metal and able to form a second metal oxide, said second metal being selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to a band gap energy of the first metal oxide not doped by the second metal.