NANOWIRE-BASED OPTOELECTRONIC DEVICE FOR LIGHT-EMISSION

摘要

A light-emitting diode is provided, including an active semiconductor area for the radiative recombination of electron-hole pairs having a plurality of nanowires, each made of an unintentionally doped semiconductor material, a first semiconductor area for radially injecting holes into each nanowire, the first semiconductor area being made of a doped semiconductor material having a first conductivity type and having a bandgap that is greater than the bandgap of the semiconductor material of the nanowires, and a second semiconductor area for axially injecting electrons into each nanowire, the second semiconductor area being made of a doped semiconductor material having a second conductivity type that is opposite to that of the first conductivity type.

主权项

1. A light-emitting diode comprising:
a plurality of nanowires formed directly on a substrate, said nanowires being made of an unintentionally doped semiconductor material, wherein said nanowires form an active semiconductor area, along an entire height of each of said nanowires, for radiative recombination of electron-hole pairs; a continuous first semiconductor area for radially injecting holes into each of said nanowires and which partially coats a portion of each of said nanowires opposite to said substrate without contacting said substrate, said continuous first semiconductor area being made of a doped semiconductor material having a first conductivity type and having a bandgap that is greater than a bandgap of the unintentionally doped semiconductor material forming said nanowires; a second semiconductor area for axially injecting electrons into each of said nanowires, said second semiconductor area being made of a doped semiconductor material having a second conductivity type that is opposite to that of the first conductivity type; and an upper ohmic electrode formed on the continuous first semiconductor area and a lower electrode formed in contact with the substrate; wherein the active semiconductor area for the radiative recombination of electron-hole pairs is made of a single II-VI type semiconductor material; wherein the continuous first semiconductor area for radially injecting holes is formed of a p-doped II-VI type semiconductor material; wherein the second semiconductor area for axially injecting electrons is formed of an n-doped semiconductor material; and wherein the height of the active semiconductor area for the radiative recombination of electron-hole pairs has a minimum value determined according to the following relationship:F·Joverflow=(4·NC3·π)2·(EF-ECk·T)3·e·B·WDHwherein F is the nanowire filling factor, J overflow is the maximum current density withstood by said nanowires with no electron saturation, NC is the effective density of states of the conduction band of the nanowire material, e is the elementary charge, B is the bimolecular recombination coefficient of the nanowire material, and WDH is the minimum value of the height of the active semiconductor area, and the height of the active semiconductor area for the radiative recombination of electron-hole pairs of said nanowires ranges between 40 nanometers and 5 micrometers.