SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERTER IN WHICH SAME IS USED

摘要

There is provided a semiconductor device including a first emitter layer of a first conductivity type, a drift layer of a second conductivity type, adjacent to the first emitter layer, a channel layer of the first conductivity type, adjacent to the drift layer, a second emitter layer of the second conductivity type, adjacent to the channel layer, a collector electrode electrically coupled to the first emitter layer, an emitter electrode electrically coupled to the second emitter layer, a first trench-gate electrode for controlling on and off of an electric current flowing between the collector electrode and the emitter electrode, and a second trench-gate electrode for controlling a turn-off power loss. The semiconductor device further includes a thyristor unit made up of the first emitter layer, the drift layer, the channel layer, and the second emitter layer. Further, the electric current has saturation characteristics in a short circuit state, and short circuit capability of a double-gate semiconductor switching device is improved because the magnitude of electric current flowing during a short circuit is under control due to the electric current saturation characteristics.

主权项

1. A semiconductor device comprising:
a first emitter layer of a first conductivity type; a drift layer of a second conductivity type, adjacent to the first emitter layer; a channel layer of the first conductivity type, adjacent to the drift layer; a second emitter layer of the second conductivity type, adjacent to the channel layer; a collector electrode electrically coupled to the first emitter layer; an emitter electrode electrically coupled to the second emitter layer; a first trench-gate electrode for controlling on and off of an electric current flowing between the collector electrode and the emitter electrode, and a second trench-gate electrode for controlling a turn-off power loss, the semiconductor device including a thyristor unit made up of the first emitter layer, the drift layer, the channel layer, and the second emitter layer, wherein the electric current has saturation characteristics in a short circuit state.