| 发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME |
| 摘要 |
A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a first gate structure, a second gate structure and a second dielectric spacer. Each of the first gate structure and the second gate structure adjacent to each other includes a first dielectric spacer. The second dielectric spacer is on one of opposing sidewalls of the first gate structure and without being disposed on the dielectric spacer of the second gate structure. |
| 申请公布号 |
US2015279957(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201414230223 |
申请日期 |
2014.03.31 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Wang Yu-Ping;Jenq Jyh-Shyang;Lin Yu-Hsiang;Chen Hsuan-Hsu;Chen Chien-Hao;Ye Yi-Han |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a first gate structure and a second gate structure adjacent to the first gate structure, each of the first gate structure and the second gate structures comprising a first dielectric spacer; and a second dielectric spacer on the first dielectric spacer on one of opposing sidewalls of the first gate structure and without being disposed on the first dielectric spacer of the second gate structure. |
| 地址 |
Hsinchu TW |
