发明名称 Method and System for Reducing Pole Imbalance by Adjusting Exposure Intensity
摘要 A method and system for adjusting exposure intensity to reduce unwanted lithographic effects is disclosed. In some exemplary embodiments, the method of photolithography includes receiving a mask and a workpiece. An orientation of an illumination pattern relative to the mask is determined, and an intensity profile of the illumination pattern is adjusted according to the orientation. The mask is exposed to radiation according to the illumination pattern and the intensity profile. Radiation resulting from the exposing of the mask is utilized to expose the workpiece. In some such embodiments, the intensity profile includes an intensity that varies across an illuminated region of the illumination pattern.
申请公布号 US2015277234(A1) 申请公布日期 2015.10.01
申请号 US201414231119 申请日期 2014.03.31
申请人 Taiwan Semiconductor Manufacturng Company, Ltd. 发明人 Lu Yen-Cheng;Yu Shinn-Sheng;Chen Jeng-Horng;Yen Anthony
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method of photolithography, the method comprising: receiving a mask and a workpiece; determining an orientation of an illumination pattern relative to the mask; adjusting an intensity profile of the illumination pattern according to the orientation; exposing the mask to radiation according to the illumination pattern and the intensity profile; and utilizing radiation resulting from the exposing of the mask to expose the workpiece.
地址 Hsin-Chu TW