发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method of manufacturing a semiconductor device wherein a cleaning process on the inside of an exhaust buffer chamber may be performed sufficiently and satisfactorily even if gases are exhausted using the exhaust buffer chamber. The method includes: (a) processing a substrate placed on a substrate placing surface in a processing space by supplying gases onto the substrate in the processing space through a side facing the substrate placing surface while exhausting the gases from the processing space using an exhaust buffer chamber including a space surrounding an outer circumference of a side portion of the processing space; and (b) cleaning and inside of the exhaust buffer chamber by supplying a cleaning gas into the exhaust buffer chamber through a cleaning gas supply pipe communicating with the space of the exhaust buffer chamber. |
申请公布号 |
US2015275357(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201514682591 |
申请日期 |
2015.04.09 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KAMAKURA Tsukasa;KAMEDA Kenji |
分类号 |
C23C16/44;H01L21/02 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
(a) processing a substrate placed on a substrate placing surface in a processing space by supplying gases onto the substrate in the processing space through a side facing the substrate placing surface while exhausting the gases from the processing space using an exhaust buffer chamber including a space surrounding an outer circumference of a side portion of the processing space; and (b) cleaning and inside of the exhaust buffer chamber by supplying a cleaning gas into the exhaust buffer chamber through a cleaning gas supply pipe communicating with the space of the exhaust buffer chamber. |
地址 |
Tokyo JP |