SEMICONDUCTOR STRUCTURES AND DEVICES INCLUDING CONDUCTIVE LINES AND PERIPHERAL CONDUCTIVE PADS

摘要

Semiconductor devices and structures, such as phase change memory devices, include peripheral conductive pads coupled to peripheral conductive contacts in a peripheral region. An array region may include memory cells coupled to conductive lines. Methods of forming such semiconductor devices and structures include removing memory cell material from a peripheral region and, thereafter, selectively removing portions of the memory cell material from the array region to define individual memory cells in the array region. Additional methods include planarizing the structure using peripheral conductive pads and/or spacer material over the peripheral conductive pads as a planarization stop material. Yet further methods include partially defining memory cells in the array region, thereafter forming peripheral conductive contacts, and thereafter fully defining the memory cells.

主权项

1. A semiconductor device structure, comprising:
a peripheral region, comprising:
peripheral conductive contacts coupled to at least one transistor;conductive pads comprising a conductive material, the conductive pads coupled to respective peripheral conductive contacts, the conductive pads each having an upper surface area greater than an upper surface area of a peripheral conductive contact coupled thereto; andperipheral trenches separating the conductive pads; and an array region, comprising:
an array of memory cells; andconductive lines each coupled to memory cells of the array of memory cells, the conductive lines comprising the same conductive material as the conductive pads in the peripheral region.