发明名称 |
DISPLAY DEVICE |
摘要 |
A display device includes: a first sub-pixel and a second sub-pixel, wherein the first sub-pixel includes: a first light emitting diode coupled between a first node and a second node; a first transistor configured to turn off the first light emitting diode by lowering a voltage of the first node below a voltage of the second node by providing a first initialization voltage to the first node; and a second transistor configured to turn on the first light emitting diode by increasing the voltage of the first node above the voltage of the second node by providing a first driving current to the first node, wherein the second sub-pixel includes a second light emitting diode, wherein a capacitance of the first light emitting diode is higher than a capacitance of the second light emitting diode. |
申请公布号 |
US2015279278(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201414488245 |
申请日期 |
2014.09.16 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
Park Kyong Tae;Ahn Pil Soo |
分类号 |
G09G3/32 |
主分类号 |
G09G3/32 |
代理机构 |
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代理人 |
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主权项 |
1. A display device comprising:
a pixel comprising a first sub-pixel and a second sub-pixel, wherein the first sub-pixel comprises:
a first light emitting diode coupled between a first node and a second node;a first transistor configured to turn off the first light emitting diode by lowering a voltage of the first node below a voltage of the second node by providing a first initialization voltage to the first node; anda second transistor configured to turn on the first light emitting diode by increasing the voltage of the first node above the voltage of the second node by providing a first driving current to the first node, wherein the second sub-pixel comprises a second light emitting diode, wherein a capacitance of the first light emitting diode is higher than a capacitance of the second light emitting diode, and an area of a gate electrode of the first transistor is smaller than an area of a gate electrode of the second transistor. |
地址 |
Yongin-City KR |