SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME, POWER MODULE, POWER CONVERSION DEVICE, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE, AND RAILWAY CARRIAGE

摘要

The purpose of the present invention is to provide exceptional withstand voltage characteristics in a semiconductor device having an FLR and a silicon carbide substrate having an off angle. The present invention solves the above problem by adopting an FLR layout that is asymmetrical in the off direction of the silicon carbide substrate, which is provided with an n-type epitaxial layer. It is accordingly possible to provide a power module, a power conversion device, a three-phase motor system, an automotive vehicle, and a railway carriage at low cost.