| 摘要 |
A sputtering target of a sintered Sb-Te-based alloy which is a sputtering target having an Sb content of 10-60 at% and a Te content of 20-60 at%, the remainder comprising one or more elements selected from among Ag, In, and Ge and unavoidable impurities, characterized in that the oxides have an average grain diameter of 0.5 µm or smaller. The sputtering target of a sintered Sb-Te-based alloy has an improved structure so that the occurrence of arcing during sputtering is prevented and that a film to be deposited by the sputtering has improved thermal stability. |
