METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND RECORDING MEDIUM

摘要

[Problem] To provide technology that can adjust a work function for the metal film. [Solution] A metal carbide film that includes a first metal element and a second metal element is formed on a substrate by carrying out a prescribed number of times in a time division: a step for supplying a first raw material gas that includes only the first metal element and does not include carbon to the substrate; a step for supplying a second raw material gas that includes only the second metal element, which is different from the first metal element, and does not include carbon to the substrate; and a step for supplying a reaction gas that includes carbon to the substrate.