半导体被覆用玻璃及使用其之半导体被覆用材料,申请号TW100102341-传众专利搜索

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发明名称	半导体被覆用玻璃及使用其之半导体被覆用材料
摘要
申请公布号	TWI501933	申请公布日期	2015.10.01
申请号	TW100102341	申请日期	2011.01.21
申请人	日本电气硝子股份有限公司	发明人	西川欣克
分类号	C03C3/066;C03C3/068;C03C8/04;H01L23/29	主分类号	C03C3/066
代理机构		代理人	陈长文台北市松山区敦化北路201号7楼
主权项	一种半导体被覆用玻璃，其特征在于：含有以质量%计为50~65%之ZnO、19~28%之B2O3、7~15%之SiO2、3~12%之Al2O3、0.1~5%之Bi2O3的组成，且实质不含有铅成分。
地址	日本

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