| 发明名称 |
CMOS Image Sensor with Epitaxial Passivation Layer |
| 摘要 |
The present disclosure provides a complimentary metal-oxide-semiconductor (CMOS) image sensor (CIS) device. In accordance with some embodiments, the device includes a semiconductor region having a front surface and a back surface; a light-sensing region extending from the front surface towards the back surface within the semiconductor region; a gate stack formed over the semiconductor region; and at least one epitaxial passivation layer disposed at least one of over and below the light-sensing region. In some embodiments, the at least one epitaxial passivation layer includes a p-type doped silicon (Si) layer. |
| 申请公布号 |
US2015279894(A1) |
申请公布日期 |
2015.10.01 |
| 申请号 |
US201414229348 |
申请日期 |
2014.03.28 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Cheng Yu-Hung;Tseng Tung-Hsiung;Wu Cheng-Ta;Tu Yeur-Luen;Tsai Chia-Shiung;Lee Ru-Liang;Ting Shyh-Fann;Sze Jhy-Jyi;Lin Tung-I;Chen Wei-Li |
| 分类号 |
H01L27/146;H01L31/18;H01L31/0216;H01L31/0288;H01L31/0336 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A complimentary metal-oxide-semiconductor (CMOS) image sensor (CIS) device, comprising:
a semiconductor region having a front surface and a back surface; a light-sensing region extending from the front surface towards the back surface within the semiconductor region; a gate stack formed over the semiconductor region; and at least one epitaxial passivation layer disposed on at least one surface of the light-sensing region, wherein the at least one epitaxial passivation layer includes a p-type doped silicon (Si) layer, and wherein the at least one surface includes a front surface of the light-sensing region and a back surface of the light-sensing region. |
| 地址 |
Hsin-Chu TW |
