SPUTTERED TRANSPARENT CONDUCTIVE ALUMINUM DOPED ZINC OXIDE FILMS

摘要

Disclosed are AZO films deposited on a transparent substrate by pulse DC using an oxide target with a composition in the range 0.5-2 wt % Al2O3, desirably at temperature above 325° C., resulting in films showing columnar grain structure with columns extending from the top to the bottom of the film, and small lateral grain size (less than 70 nm from substrate to top of film). The film has low resistivity at less than 10 Ohm/square at a thickness less than 400 nm, resistivity is desirably unchanged by annealing at temperatures of up to 450° C.

主权项

1. A transparent substrate with an AZO film deposited thereon, comprising:
a transparent substrate; an aluminum-doped zinc oxide (AZO) film on and in contact with substrate, the film having a composition in the range 0.5-2 wt % Al2O3 and a columnar grain structure having columns extending from the bottom to the top of the film, with in-plane grain size less than 70 nm.