CROSS-POINT MEMORY COMPENSATION

摘要

The apparatuses and methods described herein may operate to measure a voltage difference between a selected access line and a selected sense line associated with a selected cell of a plurality of memory cells of a memory array. The voltage difference may be compared with a reference voltage specified for a memory operation. A selection voltage(s) applied to the selected cell for the memory operation may be adjusted responsive to the comparison, such as to dynamically compensate for parasitic voltage drop.

主权项

1. An apparatus, comprising:
a memory array including a plurality of memory cells; and a compensator to implement compensation with a selection voltage applied to a selected cell of the plurality of memory cells, wherein the compensator is to measure a voltage difference between a selected access line a selected sense line associated with the selected cell and to refrain from implementing the compensation responsive to the selected cell being located in a specified area of the memory array.